? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 200 v v gsm 20 v i d25 t c = 25 c96a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 225 a i ar t c = 25 c60a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque (to-3p) 1 .13/10 nm/lb.in. weight to-3p 5.5 g to-268 5.0 g g = gate d = drain s = source tab = drain ds99117c(04/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 24 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet ixtq 96n20p v dss = 200 v ixtt 96n20p i d25 = 96 a r ds(on) = 24 m ? ? ? ? ? n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-3p (ixtq) g d s (tab) to-268 (ixtt) g s d (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 52 s c iss 4800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1020 pf c rss 270 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 30 ns t d(off) r g = 4 ? (external) 75 ns t f 30 ns q g(on) 145 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 nc q gd 80 nc r thjc 0.25 k/w r thck (to-3p) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 96 a i sm repetitive 240 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 160 ns -di/dt = 100 a/ s q rm v r = 100 v 3.0 c ixtq 96n20p ixtt 96n20p to-268 outline to-3p (ixtq) outline
? 2004 ixys all rights reserved ixtq 96n20p ixtt 96n20p fig. 2. extended output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 02468101214161820 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 01234567 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 00.51 1.522.53 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 96a i d = 48a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v t j = 175oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixtq 96n20p ixtt 96n20p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 15 30 45 60 75 90 105 120 135 150 q g - nanocoulombs v g s - volts v ds = 100v i d = 48a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 160 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g s - volts i d - amperes t j = 150oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 200 i d - amperes g f s - siemens t j = -40oc 25oc 150oc fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixtq 96n20p ixtt 96n20p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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